Synthesis and Properties of p-Si/n-Cd1?xAgxO Heterostructure for Transparent Photodiode Devices

We developed silver-doped Cd1–xAgxO thin films (where x = 0, 0.01, 0.02, 0.03 and 0.04) on amorphous glass substrate by an automated nebulizer spray pyrolysis set-up. The XRD patterns show rock salt cubic crystal structures, the crystallite sizes vary with respect to Ag doping concentrations. SEM images exhibited a uniform distribution of grains addition Ag; this feature could support enhancement electron mobility. transmittance spectra reveal that all high in visible region observed bandgap about 2.40 eV. room temperature photoluminescence (PL) studies increase near-band-edge (NBE) emission prepared different levels, resulting respective decreases bandgaps. photodiode performance was analyzed for fabricated p-Si/n-Cd1–xAgxO devices. responsivity, external quantum efficiency detectivity device were investigated. repeatability optimum (3 at.% Ag) also studied. present investigation suggests are potential candidates various industrial photodetector applications.